TPCM8102 datasheet(5/7 Pages) TOSHIBA

номер детали	TPCM8102

подробное описание детали	Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

TPCM8102

2008-03-21

5

80

100

VGS

−6

−12

0

60

−20

−30

0

−10

−20

−30

−10

20

40

VDD = −24V

0

−6

−12

VDD = −24V

−5

−15

−25

−5

−15

−25

Ciss

Coss

Crss

1000

10000

100

−0.1

−1

−10

−100

−10

−4

−3

VGS = 0 V

−1

0

0.2

0.4

0.6

0.8

−0.1

−100

1

−1

−10

VGS = −4 V

ID = −25 A

ID = −6, −12, −25 A

0

4

8

12

20

−80

−40

0

40

80

120

160

VGS = −10 V

16

−12

−6

RDS (ON) – Ta

IDR – VDS

Vth – Ta

Common source

Pulse test

Common source

Ta

= 25°C

Pulse test

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Common source

VDS = −10 V

ID = −1mA

Pulse test

Common source

ID = −40 A

Ta

= 25°C

Pulse test

Ambient temperature Ta (°C)

Drain

−source voltage VDS (V)

Drain

−source voltage VDS (V)

Capacitance – VDS

Ambient temperature Ta (°C)

Total gate charge Qg (nC)

Dynamic input/output

characteristics

−80

−40

0

40

80

160

120

0

−1.6

−0.4

−0.8

−1.2

−2

VDS

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Аналогичное описание - TPCM8102

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