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STD01N датащи(PDF) 2 Page - Sanken electric |
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STD01N датащи(HTML) 2 Page - Sanken electric |
2 / 9 page Darlington Transistors for Audio Amplifiers STD01N and STD01P 2 Sanken Electric Co., Ltd. 3-6-3 Kitano, Niiza-shi, Saitama-ken 352-8666, Japan Phone:+81-48-472-1111 http://www.sanken-ele.co.jp All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature of +25°C, unless otherwise stated. ABSOLUTE MAXIMUM RATINGS at TA = 25°C Characteristic Symbol Rating Unit Collector-Base Voltage1 VCBO 150 V Collector-Emitter Voltage1 VCEO 150 V Emitter-Base Voltage1 VEBO 5V Collector Current1 IC 10 A Base Current1 IB 1A Collector Power Dissipation2 PC 100 W Diode Forward Current IF 10 mA Junction Temperature TJ 150 °C Storage Temperature Tstg –55 to150 °C 1 For PNP type (STD01P), voltage and current values are negative. 2 TC = 25°C. SELECTION GUIDE Part Number Type hFE Rating Packing STD01N* NPN Range O: 5000 to 12000 Bulk, 100 pieces Range Y: 8000 to 20000 STD01P* PNP Range O: 5000 to 12000 Range Y: 8000 to 20000 *Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y, depending upon availability. ELECTRICAL CHARACTERISTICS at TA = 25°C Characteristic Symbol Test Conditions Min. Typ. Max. Unit Collector-Cutoff Current1 ICBO VCB = 150 V – – 100 μA Emitter Cutoff Current1 IEBO VEB = 5 V – – 100 μA Collector-Emitter Voltage1 VCEO IC = 30 mA 150 – – V DC Current Transfer Ratio2,3 hFE VCE = 4 V, IC = 6 A 5000 – 20000 – Collector-Emitter Saturation Voltage1 VCE(sat) IC = 6 A, IB = 6 mA – – –2.0 V Base-Emitter Saturation Voltage1 VBE(sat) IC = 6 A, IB = 6 mA – – –2.5 V Base-Emitter Voltage VBE STD01N VCE = 20 V, IC = 40 mA – 1220 – mV STD01P VCE = –20 V, IC = –40 mA – 1230 – mV Diode Forward Voltage VF STD01N IF = 2.5 mA – 705 – mV STD01P IF = 2.5 mA – 1580 – mV 1 For PNP type (STD01P), voltage and current values are negative. 2 hFE rating: 5000 to 12000(O brand on package), 8000 to 20000 (Y). 3 When the transistor is used in pairs, the following conditions must be satisfied: Total VF ≤ Total VBE of the transistors (the above measurement conditions shall be applied), and ∆V = 0 to 500 mV. |
Аналогичный номер детали - STD01N |
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Аналогичное описание - STD01N |
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