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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TPS61086DRC датащи(PDF) 3 Page - Texas Instruments |
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TPS61086DRC датащи(HTML) 3 Page - Texas Instruments |
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3 / 26 page  ELECTRICAL CHARACTERISTICS TPS61086 www.ti.com ................................................................................................................................................................................................ SLVSA05 – AUGUST 2009 VIN = 3.3 V, EN = IN, VS = 12 V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VIN Input voltage range 2.3 6.0 V IQ Operating quiescent current into IN Device not switching, VFB = 1.3 V 75 100 µA ISDVIN Shutdown current into IN EN = GND 1 µA VUVLO Under-voltage lockout threshold VIN falling 2.2 V VIN rising 2.3 V TSD Thermal shutdown Temperature rising 150 °C TSDHYS Thermal shutdown hysteresis 14 °C LOGIC SIGNALS EN, FREQ VIH High level input voltage VIN = 2.3 V to 6.0 V 2 V VIL Low level input voltage VIN = 2.3 V to 6.0 V 0.5 V IINLEAK Input leakage current EN = GND 0.1 µA BOOST CONVERTER VS Boost output voltage VIN + 18.5 V 0.5 VFB Feedback regulation voltage 1.230 1.238 1.246 V gm Transconductance error amplifier 107 µA/V IFB Feedback input bias current VFB = 1.238 V 0.1 µA rDS(on) N-channel MOSFET on-resistance VIN = VGS = 5 V, ISW = current limit 0.13 0.20 Ω VIN = VGS = 3.3 V, ISW = current limit 0.16 0.23 ISWLEAK SW leakage current EN = GND, VSW = 6.0V 10 µA ILIM N-Channel MOSFET current limit 2.0 2.6 3.2 A ISS Soft-start current VSS = 1.238 V 7 10 13 µA fS Oscillator frequency 0.9 1.2 1.5 MHz Line regulation VIN = 2.3 V to 6.0 V, IOUT = 10 mA 0.0002 %/V Load regulation VIN = 3.3 V, IOUT = 1 mA to 400 mA 0.11 %/A Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPS61086 |
Аналогичный номер детали - TPS61086DRC |
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Аналогичное описание - TPS61086DRC |
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