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1N6627US датащи(PDF) 1 Page - Microsemi Corporation |
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1N6627US датащи(HTML) 1 Page - Microsemi Corporation |
1 / 4 page VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS S C O T TS DALE DIVISION 1N6626US thru 1N6631US DESCRIPTION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF- 19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless- glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting (see separate data sheet for 1N6626 thru 1N6631). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. Package “E” or D-5B IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Surface mount series equivalent to the JEDEC registered 1N6626 to 1N6631 series • Voidless hermetically sealed glass package • Extremely robust construction • Triple-layer passivation • Internal “Category I” Metallurgical bonds • JAN, JANTX, and JANTXV available per MIL-PRF- 19500/590 • Further options for screening in accordance with MIL- PRF-19500 for JANS by using a “SP” prefix, e.g. SP6626US, SP6629US, etc. • Axial-leaded equivalents also available (see separate data sheet for 1N6626 thru 1N6631) • Ultrafast recovery rectifier series 200 to 1000 V • Military and other high-reliability applications • Switching power supplies or other applications requiring extremely fast switching & low forward loss • High forward surge current capability • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction Temperature: -65 oC to +150oC • Storage Temperature: -65 oC to +175oC • Peak Forward Surge Current @ 25 oC: 75A (except 1N6631 which is 60A) Note: Test pulse = 8.3ms, half-sine wave. • Average Rectified Forward Current (IO) at TEC = +110 oC: 1N6626US thru 1N6628US 2.3 A 1N6629US thru 1N6631US 1.8 A (Derate linearly at 2.5%/ oC for T EC > +110 oC) • Average Rectified Forward Current (IO) at TA=25 oC: 1N6626US thru 1N6628US 1.75 A 1N6629US thru 1N6631US 1.40 A (Derate linearly at 0.80%/ oC for T A>+25 oC. This I O rating is for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) is not exceeded. See latest issue of MIL-PRF-19500/590) • Thermal Resistance junction to endcap (RθJEC): 6.5 oC/W • Capacitance at VR= 10 V: 40 pF • Solder temperature: 260 oC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINATIONS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver end caps with Tin/Lead finish. • MARKING: Cathode band only • POLARITY: Cathode indicated by band • Tape & Reel option: Standard per EIA-481-B • Weight: 539 mg • See package dimensions and recommended pad layout on last page Microsemi Scottsdale Division Page 1 Copyright © 2009 10-30-2009 REV G, SD53A 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 |
Аналогичный номер детали - 1N6627US |
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Аналогичное описание - 1N6627US |
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