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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SEMIX402GAL066HDS датащи(PDF) 1 Page - Semikron International |
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SEMIX402GAL066HDS датащи(HTML) 1 Page - Semikron International |
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1 / 5 page  SEMiX402GAL066HDs © by SEMIKRON Rev. 36 – 02.12.2008 1 SEMiX®2s GAL Trench IGBT Modules SEMiX402GAL066HDs Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 600 V IC Tj = 175 °C Tc =25°C 509 A Tc =80°C 383 A ICnom 400 A ICRM ICRM = 2xICnom 800 A VGES -20 ... 20 V tpsc VCC = 360 V VGE ≤ 15 V Tj = 150 °C VCES ≤ 600 V 6µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25°C 543 A Tc =80°C 397 A IFnom 400 A IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1800 A Tj -40 ... 175 °C Freewheeling diode IF Tj = 175 °C Tc =25°C 543 A Tc =80°C 397 A IFnom 400 A IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1800 A Tj -40 ... 175 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =400 A VGE =15V chiplevel Tj =25°C 1.45 1.9 V Tj = 150 °C 1.70 2.1 V VCE0 Tj =25°C 0.9 1 V Tj = 150 °C 0.85 0.9 V rCE VGE =15V Tj =25°C 1.4 2.3 mΩ Tj = 150 °C 2.1 3.0 mΩ VGE(th) VGE=VCE, IC =6.4 mA 5 5.8 6.5 V ICES VGE =0V VCE =600 V Tj =25°C 0.15 0.45 mA Tj = 150 °C mA Cies VCE =25 V VGE =0V f=1MHz 24.7 nF Coes f=1MHz 1.54 nF Cres f=1MHz 0.73 nF QG VGE =- 8 V...+ 15 V 3200 nC RGint Tj =25°C 1.00 Ω |
Аналогичный номер детали - SEMIX402GAL066HDS_08 |
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Аналогичное описание - SEMIX402GAL066HDS_08 |
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