поискавой системы для электроныых деталей |
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TLP523-4 датащи(PDF) 2 Page - Toshiba Semiconductor |
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TLP523-4 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TLP523,TLP523 −2,TLP523−4 2002-09-25 2 Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol TLP523 TLP523 -2 TLP523 -4 Unit Forward current IF 60 50 mA Forward current derating ∆IF /°C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA /°C Pulse forward current IFP 1 (100µs pulse, 100pps) A Reverse voltage VR 5 V Collector -emitter voltage VCEO 55 V Emitter -collector valtage VECO 0.3 V Collector current IC 150 mA Collector power dissipation (1 circuit) PC 150 100 mW Collector power dissipation derating (1 circuit (Ta ≥ 25°C)) ∆PC /°C -1.5 -1.0 mW /°C Operating temperature range Topr -55~100 °C Storage temperature range Tstg -55~125 °C Lead soldering temperature (10 s) Tsol 260 °C Total power dissipation PT 250 150 mW Total power dissipation derating (Ta ≥ 25°C) ∆PT /°C -2.5 -1.5 mW /°C Isolation voltage (Note 1) BVS 2500 (AC, 1min., R.H.≤ 60%) Vrms (Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 20 mA Operating temperature range Topr -25 ― 85 °C |
Аналогичный номер детали - TLP523-4 |
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Аналогичное описание - TLP523-4 |
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