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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TS8GSDHC150 датащи(PDF) 3 Page - Transcend Information. Inc. |
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TS8GSDHC150 датащи(HTML) 3 Page - Transcend Information. Inc. |
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3 / 24 page  S S SD D DH H HC C C C C Ca a ar rrd d d s s se e er rriiie e es s s 8GB 150X High Capacity Secure Digital Card Transcend Information Inc. 3 Bus Operating Conditions • General Parameter Symbol Min. Max. Unit Remark Peak voltage on all lines -0.3 VDD+0.3 V All Inputs Input Leakage Current -10 10 µA All Outputs Output Leakage Current -10 10 µA • Power Supply Voltage Parameter Symbol Min. Max. Unit Remark Supply voltage VDD 2.7 3.6 V Output High Voltage VOH 0.75* VDD V IOH=-100uA@VDD Min. Output Low Voltage VOL 0.125* VDD V IOL=100uA@VDD Min. Input High Voltage VIH 0.625* VDD VDD+0.3 V Input Low Voltage VIL VSS-0.3 0.25* VDD V Power up time 250 ms From 0v to VDD Min. • Current Consumption The current consumption is measured by averaging over 1 second. ‧ Before first command: Maximum 15 mA ‧ During initialization: Maximum 100 mA ‧ Operation in Default Mode: Maximum 100 mA ‧ Operation in High Speed Mode: Maximum 200 mA ‧ Operation with other functions: Maximum 500 mA. • Bus Signal Line Load The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line: CL = CHOST + CBUS + Ν*CCARD Where N is the number of connected cards. Parameter Symbol Min. Max. Unit Remark Pull-up resistance RCMD RDAT 10 100 k Ω To prevent bus floating Bus signal line capacitance CL 40 pF 1 card CHOST+CBUS shall not exceed 30 pF |
Аналогичный номер детали - TS8GSDHC150 |
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Аналогичное описание - TS8GSDHC150 |
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