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TS13003MV датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали TS13003MV
подробное описание детали  High Voltage NPN Transistor
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

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TS13003MV
High Voltage NPN Transistor
2/6
Version: G07
Electrical Specifications (Tc = 25ºC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
IC = 1mA, IE = 0, t=300uS
800
--
--
Collector-Base Voltage
IC = 1mA, IE = 0,
Tc=125ºC, t=2uS
BVCBO
830
--
--
V
IC = 1mA, IB = 0, t=300uS
830
--
--
Collector-Emitter Sustaning Voltage
IC = 1mA, IB = 0,
Tc=125ºC, t=2uS
BVCES
830
--
--
V
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
9
--
--
V
Collector-Emitter Cutoff Current
VCE = 400V, IB = 0
ICEO
--
--
1
uA
Collector Cutoff Current
VCB = 800V, IE = 0
ICBO
--
--
1
uA
Emitter Cutoff Current
VEB = 9V, IC = 0
IEBO
--
0.1
1
uA
Collector-Emitter Saturation Voltage
IC / IB = 0.5A / 0.1A
IC / IB = 1.0A / 0.25A
IC / IB = 1.5A / 0.5A
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
--
--
--
0.2
0.35
0.6
0.5
0.8
1.5
V
Base-Emitter Saturation Voltage
IC / IB = 0.5A / 0.1A
IC / IB = 1.0A / 0.25A
VBE(SAT)1
VBE(SAT)2
--
--
--
--
1.1
1.3
V
DC Current Gain
VCE = 2V, IC = 10mA
VCE = 2V, IC = 400mA
VCE = 2V, IC = 1A
hFE1
hFE2
hFE3
15
20
6
--
--
--
--
40
20
DC Current Gain
VCE = 2V, IC = 400mA,
Tc=120ºC
hFE4
15
--
25
Dynamic
Frequency
VCE = 10V, IC = 0.1A
fT
4
--
--
MHz
Output Capacitance
VCB = 10V, f = 0.1MHz
Cob
--
21
--
pF
Resistive Load Switching Time (Ratings)
Delay Time
td
--
0.1
0.2
uS
Rise Time
tr
--
0.6
1
uS
Storage Time
tSTG
--
2
4
uS
Fall Time
VCC = 125V, IC = 1A,
IB1 = IB2 = 200mA,
tp = 25uS, Tc=25ºC
Duty Cycle ≤1%
tf
--
0.2
0.6
uS
Delay Time
td
--
0.10
0.13
uS
Rise Time
tr
--
0.38
0.51
uS
Storage Time
tSTG
--
0.34
0.43
uS
Fall Time
VCC = 125V, IC = 0.4A,
IB1 = 15mA, IB2 = 150mA,
tp = 25uS, Tc=25 ºC
Duty Cycle ≤ 1%
tf
--
0.03
0.05
uS
Delay Time
td
--
0.13
--
uS
Rise Time
tr
--
0.66
--
uS
Storage Time
tSTG
--
0.25
--
uS
Fall Time
VCC = 125V, IC = 0.4A,
IB1 = 15mA, IB2 = 150mA,
tp = 25uS, Tc=120 ºC
Duty Cycle ≤ 1%,
tf
--
0.05
--
uS
Note: pulse test: pulse width ≤300uS, duty cycle ≤2%


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