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BYC58X-600 датащи(PDF) 4 Page - NXP Semiconductors |
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BYC58X-600 датащи(HTML) 4 Page - NXP Semiconductors |
4 / 11 page BYC58X-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 4 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode 5. Thermal characteristics 6. Isolation characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; see Figure 3 - 2.5 3 K/W Rth(j-a) thermal resistance from junction to ambient free air in free air - 55 - K/W Fig 3. Transient thermal impedance from junction to heatsink as a function of pulse width 003aac889 10−1 10−2 1 10 Zth(j-h) (K/W) 10−3 tp (s) 10−5 110 10−1 10−2 10−4 10−3 tp P t Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance f = 1 MHz; from cathode to external heatsink - 10 - pF |
Аналогичный номер детали - BYC58X-600 |
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Аналогичное описание - BYC58X-600 |
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