SI2305DS datasheet(2/4 Pages) VISHAY

номер детали	SI2305DS

подробное описание детали	P-Channel 1.25-W, 1.8-V (G-S) MOSFET

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Si2305DS

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 70833

S-56947—Rev. C, 28-Dec-98

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = –10 mA

–8

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –6.4 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –6.4 V, VGS = 0 V, TJ = 55_C

–10

mA

On-State Drain Currenta

ID(on)

VDS v –5 V, VGS = –4.5 V

–6

A

On-State Drain Currenta

ID(on)

VDS v –5 V, VGS = –2.5 V

–3

A

DiS

OR

i

a

VGS = –4.5 V, ID = –3.5 A

0.044

0.052

W

Drain-Source On-Resistancea

rDS(on)

VGS = –2.5 V, ID = –3 A

0.060

0.071

W

VGS = –1.8 V, ID = –2 A

0.087

0.108

Forward Transconductancea

gfs

VDS = –5 V, ID = –3.5 A

8.5

S

Diode Forward Voltage

VSD

IS = –1.6 A, VGS = 0 V

–1.2

V

Dynamicb

Total Gate Charge

Qg

V4 V V

4 5 V

10

15

C

Gate-Source Charge

Qgs

VDS = –4 V, VGS = –4.5 V

ID ^ –3.5 A

2

nC

Gate-Drain Charge

Qgd

ID ^ 3.5 A

2

Input Capacitance

Ciss

V4 V V

0 f

1 MH

1245

F

Output Capacitance

Coss

VDS = –4 V, VGS = 0, f = 1 MHz

375

pF

Reverse Transfer Capacitance

Crss

210

Switchingb

Turn-On Time

td(on)

V4 V R

4

W

13

20

Turn-On Time

tr

VDD = –4 V, RL = 4 W

ID ^ –1.0 A, VGEN = –4.5 V

25

40

ns

Turn-Off Time

td(off)

ID ^ –1.0 A, VGEN = –4.5 V

RG = 6 W

55

80

ns

Turn-Off Time

tf

19

35

Notes

a.

For DESIGN AID ONLY, not subject to production testing.

b.

Pulse test: PW

v300 ms duty cycle v2%.

c.

Switching time is essentially independent of operating temperature.

Аналогичный номер детали - SI2305DS

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	Si2305DS	194Kb / 8P	P-Channel 1.25-W, 1.8-V (G-S) MOSFET Rev. E, 02-Feb-09
Vishay Siliconix	SI2305DS	194Kb / 8P	P-Channel 1.25-W, 1.8-V (G-S) MOSFET Rev. E, 02-Feb-09
Guangdong Kexin Industr...	SI2305DS	1Mb / 4P	P-Channel MOSFET
	SI2305DS-3	1Mb / 4P	P-Channel MOSFET
	SI2305DS-HF	1Mb / 4P	P-Channel MOSFET

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Аналогичное описание - SI2305DS

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI2305DS-T1-E3	194Kb / 8P	P-Channel 1.25-W, 1.8-V (G-S) MOSFET Rev. E, 02-Feb-09
	SI2315DS	58Kb / 4P	P-Channel 1.25-W, 1.8-V (G-S) MOSFET Rev. C, 13-Oct-03
	SI2305DS-T1	194Kb / 8P	P-Channel 1.25-W, 1.8-V (G-S) MOSFET Rev. E, 02-Feb-09
Guangdong Kexin Industr...	KI2305DS	49Kb / 2P	P-Channel 1.25-W, 1.8-V (G-S) Mosfet
Vishay Siliconix	SI1305DL	42Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. C, 07-Apr-03
	SI2311DS-T1-E3	214Kb / 8P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 24-Mar-08
	SI1407DL-T1	80Kb / 5P	P-Channel 1.8-V (G-S) MOSFET Rev. D, 12-Jun-06
	SI4465ADY	216Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Jan-07
	SI6467BDQ	196Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 12-Dec-05
	SI1307DL	68Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Nov-99

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