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SI2305DS датащи(PDF) 2 Page - Vishay Siliconix |
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SI2305DS датащи(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si2305DS Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70833 S-56947—Rev. C, 28-Dec-98 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 mA –8 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = –6.4 V, VGS = 0 V –1 mA Zero Gate Voltage Drain Current IDSS VDS = –6.4 V, VGS = 0 V, TJ = 55_C –10 mA On-State Drain Currenta ID(on) VDS v –5 V, VGS = –4.5 V –6 A On-State Drain Currenta ID(on) VDS v –5 V, VGS = –2.5 V –3 A DiS OR i a VGS = –4.5 V, ID = –3.5 A 0.044 0.052 W Drain-Source On-Resistancea rDS(on) VGS = –2.5 V, ID = –3 A 0.060 0.071 W VGS = –1.8 V, ID = –2 A 0.087 0.108 Forward Transconductancea gfs VDS = –5 V, ID = –3.5 A 8.5 S Diode Forward Voltage VSD IS = –1.6 A, VGS = 0 V –1.2 V Dynamicb Total Gate Charge Qg V4 V V 4 5 V 10 15 C Gate-Source Charge Qgs VDS = –4 V, VGS = –4.5 V ID ^ –3.5 A 2 nC Gate-Drain Charge Qgd ID ^ 3.5 A 2 Input Capacitance Ciss V4 V V 0 f 1 MH 1245 F Output Capacitance Coss VDS = –4 V, VGS = 0, f = 1 MHz 375 pF Reverse Transfer Capacitance Crss 210 Switchingb Turn-On Time td(on) V4 V R 4 W 13 20 Turn-On Time tr VDD = –4 V, RL = 4 W ID ^ –1.0 A, VGEN = –4.5 V 25 40 ns Turn-Off Time td(off) ID ^ –1.0 A, VGEN = –4.5 V RG = 6 W 55 80 ns Turn-Off Time tf 19 35 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. |
Аналогичный номер детали - SI2305DS |
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Аналогичное описание - SI2305DS |
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