2SD1834_10 datasheet(1/3 Pages) ROHM

номер детали	2SD1834

подробное описание детали	Medium Power Transistor (60V, 1A)

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производитель	ROHM [Rohm]

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2010.02 - Rev.B

Medium Power Transistor (60V, 1A)

2SD1834



Features



Dimensions (Unit : mm)

1) Darlington connection for high DC current gain

(typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A)

2) High input impedance.



Inner circuit

B

C

E

C

B

E

: Base

: Collector

: Emitter



Absolute maximum ratings (Ta=25

C)

Parameter

Symbol

VCBO

VCES

VEBO

IC

PC

Tj

Tstg

Limits

60

7

1

0.5

2

150

−55 to +150

Unit

V

A(DC)

2

A(Pulse)

∗1

∗2

∗3

W

°C

∗1 Single pulse Pw=100ms

∗2 RBE=0Ω

∗3 Mounted on a 40×40×t0.7mm ceramic substrate

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature



Electrical characteristics (Ta=25

C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

fT

Cob

60

7

−

0.9

150

7

−

1

1.5

−

V

μA

V

MHz

pF

IC

=50μA

IC

=100μA , RBE=0Ω

IE

=50μA

VCB

=60V

VEB

=6V

IC/IB

=500mA/500μA

hFE

2000

−−

−

VCE

/IC

=3V/500mA

∗

VCE

=5V , IE= −10mA , f=100MHz

VCE

=10V , IE=0A , f=1MHz

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Transition frequency

Output capacitance

DC current transfer ratio

∗ Measured using pulse current.

MPT3

(1)Base

(2)Collector

(3)Emitter

1.5

0.4

1.6

0.5

3.0

0.4

1.5

(3)

(2)

(1)

4.5

Аналогичный номер детали - 2SD1834_10

производитель	номер детали	датащи	подробное описание детали
Rohm	2SD1834T100	136Kb / 3P	Medium Power Transistor (60V, 1A)

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Аналогичное описание - 2SD1834_10

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Rohm	2SD1834T100	136Kb / 3P	Medium Power Transistor (60V, 1A)
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2SD1834 датащи(PDF) 1 Page - Rohm

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