1N5400 – 1N5408

1 of 3

© 2002 Won-Top Electronics

1N5400 – 1N5408

3.0A SILICON RECTIFIER

Features

!

Diffused Junction

!

Low Forward Voltage Drop

!

High Current Capability

A

B

A

!

High Reliability

!

High Surge Current Capability

Mechanical Data

C

!

Case: Molded Plastic

D

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 1.2 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

!

Epoxy: UL 94V-O rate flame retardant

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1N

5400

1N

5401

1N

5402

1N

5404

1N

5406

1N

5407

1N

5408

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

50

100

200

400

600

800

1000

V

RMS Reverse Voltage

35

70

140

280

420

560

700

V

Average Rectified Output Current

(Note 1)

3.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

200

A

Forward Voltage

1.0

V

Peak Reverse Current

At Rated DC Blocking Voltage

5.0

100

µA

Typical Junction Capacitance (Note 2)

50

pF

Typical Thermal Resistance Junction to Ambient

(Note 1)

18

K/W

Operating Temperature Range

-65 to +125

°C

Storage Temperature Range

-65 to +150

°C

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

WT E

PO W E R SEM IC O ND UC TO R S

DO-201AD

Dim

Min

Max

A

25.4

—

B

8.50

9.50

C

1.20

1.30

D

5.0

5.60

All Dimensions in mm