TIP120 datasheet(2/4 Pages) RECTRON

номер детали	TIP120

подробное описание детали	TO-220 DARLING TRANSISTOR (NPN)

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RATING AND CHARACTERISTICS CURVES (TIP120)

Figure4 CAPACITANCE

Figure1 THERMAL RESISTANCE

There are two limitations on the power handing ability of a tran-

sistor average junction temperature and second breakdown.Safe

operating aresa curves indicate IC-VCE limits of the transistor th-

at must be observed for reliable operation, i.e.,the transistor must

not be subjected to greater dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk)=150OC,TC is variable d-

epending on conditions. Second breakdown pulse limit are valid

for duty cycles to 10% provided TJ(pk)<150OC.TJ(pk) may be calc-

ulated from the data in Figure 1. At high case temperatures, ther-

mal limitations will reduce the power that can be handled to valu-

es less than the limitations imposed by second breakdown.

Figure3 Small-Signal Current Gain

f, FREQUENCY, (KHz)

VR, REVERSE VOLTAGE, (V)

0.01

0.02

0.05

0.3

0.5

0.7

1.0

0.1

0.2

0.5

1.0 2.0

5.0

Figure2 ACTIVE-REGION SAFE OPERATING AREA

VCE, COLLECTOR-EMITTER VOLTAGE, (V)

t, TIME, (mS)

1.0

2.0 3.0

5.0 7.0 10

20

30

50

70 100

10

1.0

2.0

5.0 10 20

50 100 200

500 1K

0.1

0.2

0.5 1.0 2.0

5.0

10 20

50 100

0.2

0.1

0.07

0.05

0.03

0.02

0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

20

10

20

50

100 200

500

1000

50

100

200

300

500

2K

1K

3K

5K

10K

20

30

10

30

50

70

100

200

300

ZqJC = r(t) RqJC

RqJC= 1.92OC/W MAX.

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk)-TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D =t1/t2

t1

t2

500uS

1mS

5mS

100uS

TJ=150OC

BONDING WIRE LIMITED

THERMALLY LIMITED

@TC=25OC(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVE APPLY BELOW

RATED VCEO

DC

TC= 25

OC

VCE= 40 Vdc

IC= 3.0 Adc

Cob

Cjb

TJ= 25

OC

SINGLE PULSE

D =0.01

D =0.02

D =0.05

D =0.1

D =0.2

D =0.5

Аналогичный номер детали - TIP120

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	TIP120	206Kb / 4P	POWER TRANSISTORS(5.0A,60-100V,65W)
Fairchild Semiconductor	TIP120	168Kb / 5P	NPN Epitaxial Darlington Transistor
Diotec Semiconductor	TIP120	110Kb / 2P	Si-Epitaxial Planar Darlington Power Transistors
Nanjing International G...	TIP120	1Mb / 4P	TO-220-3L Plastic-Encapsulate Transistors
ON Semiconductor	TIP120	114Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2007 - Rev. 7

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Аналогичное описание - TIP120

производитель	номер детали	датащи	подробное описание детали
Avic Technology	AV13005	149Kb / 2P	TO-220 NPN SILICON POWER TRANSISTOR
Central Semiconductor C...	MJE13005	120Kb / 2P	NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE
Central Semiconductor C...	BU406	54Kb / 1P	NPN SLICON POWER TRANSISTOR JEDEC TO-220 CASE
KEC(Korea Electronics)	KTB1424	114Kb / 1P	EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE DARLING TON TRANSISTOR)
Foshan Blue Rocket Elec...	BU406M	1,011Kb / 7P	Silicon NPN transistor in a TO-220 Plastic Package.
	D44H11	859Kb / 6P	Silicon NPN transistor in a TO-220 Plastic Package.
	KSD526	923Kb / 6P	Silicon NPN transistor in a TO-220 Plastic Package.
	MJE3055T	939Kb / 6P	Silicon NPN transistor in a TO-220 Plastic Package.
	TIP31B	1Mb / 6P	Silicon NPN transistor in a TO-220 Plastic Package.
	TIP31C	1Mb / 6P	Silicon NPN transistor in a TO-220 Plastic Package.

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