BCW68HR datasheet(2/2 Pages) ZETEX

номер детали	BCW68HR

подробное описание детали	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT CONDITIONS.

Collector-Emitter

Breakdown Voltage

V(BR)CEO -45

V

ICEO=-10mA

V(BR)CES -60

IC=-10

µA

Emitter-Base Breakdown Voltage

V(BR)EBO -5

V

IEBO =-10µA

Collector-Emitter

Cut-off Current

ICES

-20

-10

nA

µA

VCES =-45V

VCES =-45V, Tamb=150°C

Emitter-Base Cut-Off Current

IEBO

-20

nA

VEBO =-4V

Collector-Emitter Saturation

Voltage

VCE(sat)

-0.7

-0.3

V

IC=-100mA, IB = -10mA

IC= -500mA, IB =-50mA*

Base-Emitter Saturation Voltage

VBE(sat)

-2

V

IC=-500mA,IB=-50mA*

Static

Forward

Current

Transfer

BCW68F

hFE

100

35

170

250

IC=-100mA, VCE =-1V*

IC=-500mA, VCE =-2V*

BCW68G

hFE

160

60

250

400

IC=-100mA, VCE =-1V*

IC=-500mA, VCE =-2V*

BCW68H

hFE

250

100

350

630

IC=-100mA, VCE =-1V*

IC=-500mA, VCE =-2V*

Transition Frequency

fT

100

MHz

IC =-20mA, VCE =-10V

f = 100MHz

Output Capacitance

Cobo

12

18

pF

VCB =-10V, f =1MHz

Input Capacitance

Cibo

80

pF

VEB =-0.5V, f =1MHz

Noise Figure

N

2

10

dB

IC= -0.2mA, VCE =- 5V

RG =1KΩ, f=1KH

∆f=200Hz

Switching times:

Turn-On Time

Turn-Off Time

ton

toff

100

400

ns

IC=-150mA

IB1=- IB2 =-15mA

RL=150Ω

Spice parameter data is available upon request for this device

*Measured under pulsed conditions.

BCW68

TBA

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