74AUP1G38 datasheet(6/15 Pages) NXP

номер детали	74AUP1G38

подробное описание детали	Low-power 2-input NAND gate (open drain)

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6 / 15 page

74AUP1G38_3

Product data sheet

Rev. 03 — 22 June 2009

6 of 15

NXP Semiconductors

74AUP1G38

Low-power 2-input NAND gate (open drain)

IOZ

OFF-state output current

VI = VIH or VIL (and at least one input

LOW); VO = 0 V to 3.6 V; VCC = 0 V to

3.6 V

--

±0.5

µA

IOFF

power-off leakage current

VI or VO = 0 V to 3.6 V; VCC = 0 V

-

±0.5

µA

∆IOFF

additional power-off

leakage current

VI or VO = 0 V to 3.6 V;

VCC = 0 V to 0.2 V

--

±0.6

µA

ICC

supply current

VI = GND or VCC; IO = 0 A;

VCC = 0.8 V to 3.6 V

-

0.9

µA

∆ICC

additional supply current

VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V

-

50

µA

Tamb = −40 °C to +125 °C

VIH

HIGH-level input voltage

VCC = 0.8 V

0.75

× V

CC

--

V

VCC = 0.9 V to 1.95 V

0.70

× V

CC

--

V

VCC = 2.3 V to 2.7 V

1.6

-

V

VCC = 3.0 V to 3.6 V

2.0

-

V

VIL

LOW-level input voltage

VCC = 0.8 V

-

0.25

× VCC V

VCC = 0.9 V to 1.95 V

-

0.30

× VCC V

VCC = 2.3 V to 2.7 V

-

0.7

V

VCC = 3.0 V to 3.6 V

-

0.9

V

VOL

LOW-level output voltage

VI = VIH or VIL

IO = 20 µA; VCC = 0.8 V to 3.6 V

-

0.11

V

IO = 1.1 mA; VCC = 1.1 V

-

0.33

× VCC V

IO = 1.7 mA; VCC = 1.4 V

-

0.41

V

IO = 1.9 mA; VCC = 1.65 V

-

0.39

V

IO = 2.3 mA; VCC = 2.3 V

-

0.36

V

IO = 3.1 mA; VCC = 2.3 V

-

0.50

V

IO = 2.7 mA; VCC = 3.0 V

-

0.36

V

IO = 4.0 mA; VCC = 3.0 V

-

0.50

V

II

input leakage current

VI = GND to 3.6 V; VCC = 0 V to 3.6 V

-

±0.75

µA

IOZ

OFF-state output current

VI = VIH or VIL (and at least one input

LOW); VO = 0 V to 3.6 V; VCC = 0 V to

3.6 V

--

±0.75

µA

IOFF

power-off leakage current

VI or VO = 0 V to 3.6 V; VCC = 0 V

-

±0.75

µA

∆IOFF

additional power-off

leakage current

VI or VO = 0 V to 3.6 V;

VCC = 0 V to 0.2 V

--

±0.75

µA

ICC

supply current

VI = GND or VCC; IO = 0 A;

VCC = 0.8 V to 3.6 V

-

1.4

µA

∆ICC

additional supply current

VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V

-

75

µA

Table 7.

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ

Max

Unit

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Аналогичное описание - 74AUP1G38

производитель	номер детали	датащи	подробное описание детали
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Toshiba Semiconductor	TC74HC03AP	208Kb / 7P	Quad 2-Input NAND Gate (open drain)
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Аналогичный номер детали - 74AUP1G38

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