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BC847DS датащи(PDF) 4 Page - NXP Semiconductors |
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BC847DS датащи(HTML) 4 Page - NXP Semiconductors |
4 / 12 page BC847DS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 25 August 2009 4 of 12 NXP Semiconductors BC847DS 45 V, 100 mA NPN/NPN general-purpose transistor 7. Characteristics FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab622 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 102 10 103 Zth(j-a) (K/W) 1 δ = 1 0.75 0.50 0.33 0.10 0.05 0.02 0.01 0 0.20 Table 7. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off current VCB =30V; IE = 0 A --15 nA VCB =30V; IE =0A; Tj = 150 °C --5 µA IEBO emitter-base cut-off current VEB =6V; IC = 0 A - - 100 nA hFE DC current gain VCE =5V IC =10 µA - 280 - IC = 2 mA 200 300 450 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 55 100 mV IC = 100 mA; IB = 5 mA - 200 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 755 850 mV IC = 100 mA; IB = 5 mA - 1000 - mV VBE base-emitter voltage VCE =5V IC = 2 mA 580 650 700 mV IC = 10 mA - - 770 mV |
Аналогичный номер детали - BC847DS |
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Аналогичное описание - BC847DS |
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