CSD16322Q5C datasheet(5/10 Pages) TI

номер детали	CSD16322Q5C

подробное описание детали	DualCool??N-Channel NexFET??Power MOSFETs

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производитель	TI [Texas Instruments]

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TC − Case Temperature − C

°

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

−75

−25

25

75

125

175

G007

ID

GS

=20A

V

=4.5V

0.0

0.2

0.4

0.6

0.8

1.0

VSD − SourcetoDrainVoltage − V

G008

100

1

0.01

0.0001

0.001

0.1

10

1.2

TC =125 C

°

TC =25 C

°

VD − DrainVoltage − V

G009

1k

10

0.01

1

100

0.1

0.01

0.1

10

100

1

SinglePulse

Typical R

=98 C/W(minCu)

q

JA

°

1ms

10ms

1s

DC

AreaLimited

byRDS(on)

100ms

t(AV) − Timein Avalanche − ms

G010

10

1

100

0.01

0.1

10

100

1

TC =25 C

°

TC =125 C

°

TC − Case Temperature − C

°

0

20

40

80

60

120

−50

−25

0

25

50

75

100

125

150

175

G011

100

CSD16322Q5C

www.ti.com

SLPS241A – DECEMBER 2009 – REVISED JANUARY 2010

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

Figure 8. On Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

TEXT ADDED FOR SPACING

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

TEXT ADDED FOR SPACING

Figure 12. Maximum Drain Current vs. Temperature

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