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TLP548J датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TLP548J
подробное описание детали  Office Machine Household Use Equipment Solid State Relay Switching Power Supply
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP548J датащи(HTML) 2 Page - Toshiba Semiconductor

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TLP548J
2009-10-20
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating (Ta ≥ 53°C)
ΔIF / °C
−0.7
mA / °C
Peak forward current (100 μs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Peak forward voltage (RGK = 27kΩ)
VDRM
600
V
Peak reverse voltage (RGK = 27kΩ)
VRRM
600
V
On
−state current
IT (RMS)
150
mA
On
−state current derating (Ta ≥ 25°C)
ΔIT / °C
−2.0
mA / °C
Peak on
−state current (100 μs pulse, 120 pps)
ITP
3
A
Peak one cycle surge current
ITSM
2
A
Peak reverse gate voltage
VGM
5
V
Operating temperature range
Topr
−40 to 100
°C
Storage temperature range
Tstg
−55 to 125
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min., R.H. ≤ 60%)
(Note 1)
BVS
2500
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Note 1: Device Considered a two terminal device : pins 1,2 and 3 shorted together and pins 4,5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
VAC
240
Vac
Forward current
IF
10
25
mA
Operating temperature
Topr
−25
85
°C
Gate to cathode resistance
RGK
27
33
kΩ
Gate to cathode capacity
CGK
0.01
0.1
μF
Note 2: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.


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