поискавой системы для электроныых деталей |
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Si8235BB-C-IS1 датащи(PDF) 8 Page - Silicon Laboratories |
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Si8235BB-C-IS1 датащи(HTML) 8 Page - Silicon Laboratories |
8 / 52 page Si823x 8 Rev. 0.3 Shutdown Time from Disable True tSD —— 60 ns Restart Time from Disable False tRESTART —— 60 ns Device Start-up Time tSTART Time from VDD_ = VDD_UV+ to VOA, VOB = VIA, VIB —5 7 µs Common Mode Transient Immunity CMTI VIA, VIB, PWM = VDDI or 0 V 30 50 — kV/µs Table 1. Electrical Characteristics1 (Continued) 4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C Parameter Symbol Test Conditions Min Typ Max Units Notes: 1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices. 2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only). 3. The largest RDT resistor that can be used is 220 k . |
Аналогичный номер детали - Si8235BB-C-IS1 |
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Аналогичное описание - Si8235BB-C-IS1 |
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