2SJ412

2009-09-29

1

2SJ412

DC-DC Converter, Relay Drive and Motor Drive

Applications

• 4-V gate drive

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−100

V

−100

V

Gate-source voltage

±20

V

DC

(Note 1)

−16

Drain current

Pulse (Note 1)

−64

A

Drain power dissipation (Tc = 25°C)

60

W

Single pulse avalanche energy

(Note 2)

292

mJ

Avalanche current

−16

A

Repetitive avalanche energy (Note 3)

6

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

2.08

°C/W

Thermal resistance, channel to ambient

83.3

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum junction temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10S1B

Weight: 1.5 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)