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2SK1529 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SK1529 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SK1529 2009-12-21 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application High breakdown voltage : VDSS = 180 V High forward transfer admittance : |Yfs| = 4.0 S (typ.) Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 180 V Gate−source voltage VGSS ±20 V Drain current (Note 1) ID 10 A Drain power dissipation (Tc = 25°C) PD 120 W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150°C. Marking Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut−off current IDSS VDS = 180 V, VGS = 0 — — 1.0 mA Gate leakage current IGSS VDS = 0, VGS = ±20 V — — ±0.5 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 180 — — V Drain−source saturation voltage VDS (ON) ID = 6 A, VGS = 10 V — 2.5 5.0 V Gate−source cut−off voltage (Note 3) VGS (OFF) VDS = 10 V, ID = 0.1 A 0.8 — 2.8 V Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A — 4.0 — S Input capacitance Ciss VDS = 30 V, VGS = 0, f = 1 MHz — 700 — Output capacitance Coss VDS = 30 V, VGS = 0, f = 1 MHz — 150 — Reverse transfer capacitance Crss VDS = 30 V, VGS = 0, f = 1 MHz — 90 — pF Note 3: VGS (OFF) Classification 0: 0.8 to 1.6 Y: 1.4 to 2.8 This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ.) K1529 Lot No. Note 2 Part No. (or abbreviation code) Note 2: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. |
Аналогичный номер детали - 2SK1529 |
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Аналогичное описание - 2SK1529 |
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