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2SK1529 датащи(PDF) 1 Page - Toshiba Semiconductor

номер детали 2SK1529
подробное описание детали  High-Power Amplifier Application
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK1529 датащи(HTML) 1 Page - Toshiba Semiconductor

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2SK1529
2009-12-21
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1529
High-Power Amplifier Application
High breakdown voltage
: VDSS = 180 V
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Complementary to 2SJ200
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
180
V
Gate−source voltage
VGSS
±20
V
Drain current
(Note 1)
ID
10
A
Drain power dissipation (Tc = 25°C)
PD
120
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150°C.
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cut−off current
IDSS
VDS = 180 V, VGS = 0
1.0
mA
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
±0.5
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
180
V
Drain−source saturation voltage
VDS (ON)
ID = 6 A, VGS = 10 V
2.5
5.0
V
Gate−source cut−off voltage (Note 3)
VGS (OFF)
VDS = 10 V, ID = 0.1 A
0.8
2.8
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
4.0
S
Input capacitance
Ciss
VDS = 30 V, VGS = 0, f = 1 MHz
700
Output capacitance
Coss
VDS = 30 V, VGS = 0, f = 1 MHz
150
Reverse transfer capacitance
Crss
VDS = 30 V, VGS = 0, f = 1 MHz
90
pF
Note 3: VGS (OFF) Classification
0: 0.8 to 1.6 Y: 1.4 to 2.8
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
K1529
Lot No.
Note 2
Part No. (or abbreviation code)
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The RoHS
is the Directive 2002/95/EC of the European Parliament and of the Council of
27 January 2003 on the restriction of the use of certain hazardous substances
in electrical and electronic equipment.


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