поискавой системы для электроныых деталей |
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TPCF8402_0912 датащи(PDF) 3 Page - Toshiba Semiconductor |
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TPCF8402_0912 датащи(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TPCF8402 2009-12-10 3 P-channel Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V VGS = −4.5 V, ID = −1.6A ⎯ 80 105 Drain-source ON resistance RDS (ON) VGS = −10 V, ID = −1.6 A ⎯ 60 72 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.6 A 2.9 5.9 ⎯ S Input capacitance Ciss ⎯ 600 ⎯ Reverse transfer capacitance Crss ⎯ 60 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 70 ⎯ pF Rise time tr ⎯ 5.3 ⎯ Turn-on time ton ⎯ 12 ⎯ Fall time tf ⎯ 8.4 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 34 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 14 ⎯ Gate-source charge 1 Qgs1 ⎯ 1.4 ⎯ Gate-drain (“miller”) charge Qgd VDD ≈ −24 V, VGS = −10 V, ID = −3.2 A ⎯ 2.7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −12.8 A Forward voltage (diode) VDSF IDR = −3.2 A, VGS = 0 V ⎯ ⎯ 1.2 V VDD ≈ −15 V −10 VGS 0 V ID = −1.6 A VOUT |
Аналогичный номер детали - TPCF8402_0912 |
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Аналогичное описание - TPCF8402_0912 |
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