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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD17312Q5 датащи(PDF) 3 Page - Texas Instruments |
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CSD17312Q5 датащи(HTML) 3 Page - Texas Instruments |
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3 / 10 page  GATE Source DRAIN M0137-02 GATE Source DRAIN M0137-01 t - Pulse Duration - s p 0.001 0.01 0.1 1 10 100 1k 0.001 0.01 0.1 1 10 G012 Duty Cycle = t /t 1 2 t 1 t 2 Typical R = 95 C/W (min Cu) T = P Z R q q q JA J JA JA ° ´ ´ P Single Pulse 0.01 0.02 0.05 0.1 0.3 0.5 CSD17312Q5 www.ti.com SLPS256 – MARCH 2010 Max RqJA = 49°C/W Max RqJA = 119°C/W when mounted on when mounted on a 1 inch2 (6.45 cm2) of minimum pad area of 2-oz. (0.071-mm thick) 2-oz. (0.071-mm thick) Cu. Cu. Text Added For Spacing Text Added For Spacing Text Added For Spacing Text Added For Spacing TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): CSD17312Q5 |
Аналогичный номер детали - CSD17312Q5 |
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Аналогичное описание - CSD17312Q5 |
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