BTA16-600BW3G datasheet(1/6 Pages) ONSEMI

номер детали	BTA16-600BW3G

подробное описание детали	Triacs Silicon Bidirectional Thyristors

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производитель	ONSEMI [ON Semiconductor]

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December, 2008 − Rev. 1

1

Publication Order Number:

BTA16−600BW3/D

BTA16-600BW3G,

BTA16-800BW3G

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications

where high noise immunity and high commutating di/dt are required.

Features

• Blocking Voltage to 800 V

• On-State Current Rating of 16 A RMS at 80°C

• Uniform Gate Trigger Currents in Three Quadrants

• High Immunity to dV/dt − 1500 V/ms minimum at 125°C

• Minimizes Snubber Networks for Protection

• Industry Standard TO-220AB Package

• High Commutating dI/dt − 4.0 A/ms minimum at 125°C

• Internally Isolated (2500 VRMS)

• These are Pb−Free Devices

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open)

BTA16−600BW3G

BTA16−800BW3G

VDRM,

VRRM

600

800

V

On-State RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 80°C)

IT(RMS)

16

A

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

TC = 25°C)

ITSM

170

A

Circuit Fusing Consideration (t = 8.3 ms)

I2t

120

A2sec

Non−Repetitive Surge Peak Off−State

Voltage (TJ = 25°C, t = 10ms)

VDSM/

VRSM

VDSM/VRSM

+100

V

Peak Gate Current (TJ = 125°C, t = 20ms)

IGM

4.0

A

Peak Gate Power

(Pulse Width ≤ 1.0 ms, TC = 80°C)

PGM

20

W

Average Gate Power (TJ = 125°C)

PG(AV)

1.0

W

Operating Junction Temperature Range

TJ

−40 to +125

°C

Storage Temperature Range

Tstg

−40 to +150

°C

RMS Isolation Voltage

(t = 300 ms, R.H. ≤ 30%, TA = 25°C)

Viso

2500

V

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

TRIACS

16 AMPERES RMS

600 thru 800 VOLTS

TO−220AB

CASE 221A

STYLE 12

http://onsemi.com

BTA16−xBWG

AYWW

MARKING

DIAGRAM

x

= 6 or 8

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

Device

Package

Shipping

ORDERING INFORMATION

BTA16−600BW3G

TO−220AB

(Pb−Free)

50 Units / Rail

PIN ASSIGNMENT

1

2

3

Gate

Main Terminal 1

Main Terminal 2

4

No Connection

MT1

G

MT2

BTA16−800BW3G

TO−220AB

(Pb−Free)

50 Units / Rail

*For additional information on our Pb−Free strategy and

soldering details, please download the ON Semicon-

ductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

1

2

3

4

Аналогичный номер детали - BTA16-600BW3G

производитель	номер детали	датащи	подробное описание детали
Kersemi Electronic Co.,...	BTA16-600BW	1Mb / 6P	16 A Snubberless, logic level and standard Triacs
Inchange Semiconductor ...	BTA16-600BW	107Kb / 1P	With TO-220AB insulated package
STMicroelectronics	BTA16-600BW	217Kb / 18P	Snubberless™, logic level and standard 16 A Triacs DS2114 - Rev 11 - May 2018
HAOPIN MICROELECTRONICS...	BTA16-600BW	442Kb / 5P	Three quadrant triacs
STMicroelectronics	BTA16-600BWRG	99Kb / 9P	16A TRIACS

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Аналогичное описание - BTA16-600BW3G

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	BTB08-600BW3G	90Kb / 6P	Triacs Silicon Bidirectional Thyristors February, 2008 - Rev. 1
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	MAC12HCD	61Kb / 6P	Triacs Silicon Bidirectional Thyristors December, 2005 ??Rev. 3
Kersemi Electronic Co.,...	MAC9D	399Kb / 6P	Triacs Silicon Bidirectional Thyristors
Kersemi Electronic Co.,...	MAC12HCD	415Kb / 6P	Triacs Silicon Bidirectional Thyristors
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