поискавой системы для электроныых деталей |
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BTB08-600BW3G датащи(PDF) 5 Page - ON Semiconductor |
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BTB08-600BW3G датащи(HTML) 5 Page - ON Semiconductor |
5 / 6 page BTB08-600BW3G, BTB08-800BW3G http://onsemi.com 5 1 10 100 -40 -25 -10 5 20 35 50 65 80 95 110 125 Figure 6. Typical Gate Trigger Current Variation TJ, JUNCTION TEMPERATURE (°C) VD = 12 V RL = 30 W Q1 Q3 Q2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Trigger Voltage Variation VD = 12 V RL = 30 W Q3 Q1 Q2 Figure 8. Critical Rate of Rise of Off‐State Voltage (Exponential Waveform) RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) 5000 4K 3K 2K 1K 0 10000 1000 100 10 VD = 800 Vpk TJ = 125°C Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c LL 1N4007 200 V + MEASURE I - CHARGE CONTROL CHARGE TRIGGER NON‐POLAR CL 51 W MT2 MT1 1N914 G 200 VRMS ADJUST FOR ITM, 60 Hz VAC Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. |
Аналогичный номер детали - BTB08-600BW3G |
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Аналогичное описание - BTB08-600BW3G |
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