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CAT24WC66XI-T2C датащи(PDF) 2 Page - ON Semiconductor

номер детали CAT24WC66XI-T2C
подробное описание детали  64-Kb I2C Serial EEPROM with Partial Array Write Protection
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Temperature Under Bias
–55 to +125
°C
Storage Temperature
–65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
–2.0 to VCC + 2.0
V
VCC with Respect to Ground
–2.0 to 7.0
V
Package Power Dissipation Capability (TA = 25°C)
1.0
W
Lead Soldering Temperature (10 secs)
300
°C
Output Short Circuit Current (Note 2)
100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is –0.5 V. During transitions, inputs may undershoot to –2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC + 0.5 V, which may overshoot to VCC + 2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 2. REABILITY CHARACTERISTICS
Symbol
Parameter
Reference Test Method
Min
Max
Units
NEND
(Note 3)
Endurance
MIL−STD−883, Test Method 1033
1,000,000
Cycles / Byte
TDR
(Note 3)
Data Retention
MIL−STD−883, Test Method 1008
100
Years
VZAP
(Note 3)
ESD Susceptibility
MIL−STD−883, Test Method 3015
2000
Volts
ILTH
(Notes 3, 4)
Latch−up
JEDEC Standard 17
100
mA
3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from –1 V to VCC + 1 V.
Table 3. D.C. OPERATING CHARACTERISTICS (VCC = 1.8 V to 5.5 V, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC
Power Supply Current
fSCL = 100 kHz
3
mA
ISB
(Note 5)
Standby Current (VCC = 5 V)
VIN = GND or VCC
1
mA
ILI
Input Leakage Current
VIN = GND to VCC
10
mA
ILO
Output Leakage Current
VOUT = GND to VCC
10
mA
VIL
Input Low Voltage
−1
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage (VCC = +3.0 V)
IOL = 3.0 mA
0.4
V
VOL2
Output Low Voltage(VCC = +1.8 V)
IOL = 1.5 mA
0.5
V
5. Maximum standby current (ISB) = 10 mA for the Automotive and Extended Automotive temperature range.
Table 4. CAPACITANCE (TA = 25°C, f = 1.0 MHz, VCC = 5 V)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
CI/O
(Note 3)
Input/Output Capacitance (SDA)
VI/O = 0 V
8
pF
CIN
(Note 3)
Input Capacitance
(A0, A1, A2, SCL, WP)
VIN = 0 V
6
pF


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