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CAT28C512HI-12T датащи(PDF) 7 Page - ON Semiconductor

номер детали CAT28C512HI-12T
подробное описание детали  512K-Bit CMOS PARALLEL EEPROM
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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CAT28C512/513
7
Doc. No. MD-1007, Rev . I
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
Page Write
The page write mode of the CAT28C512/513 (essen-
tially an extended BYTE WRITE mode) allows from 1 to
128 bytes of data to be programmed within a single
EEPROM write cycle. This effectively reduces the byte-
write time by a factor of 128.
Following an initial WRITE operation (
WE pulsed low, for
tWP, and then high) the page write mode can begin by
issuing sequential
WE pulses, which load the address
and data bytes into a 128 byte temporary buffer. The
page address where data is to be written, specified by
bits A7 to A15, is latched on the last falling edge of WE.
Each byte within the page is defined by address bits A0
to A6 (which can be loaded in any order) during the first
and subsequent write cycles. Each successive byte load
cycle must begin within tBLC MAX of the rising edge of the
preceding
WE pulse. There is no page write window
limitation as long as
WE is pulsed low within tBLC MAX.
Upon completion of the page write sequence,
WE must
stay high a minimum of tBLC MAX for the internal auto-
matic program cycle to commence. This programming
cycle consists of an erase cycle, which erases any data
that existed in each addressed cell, and a write cycle,
which writes new data back into the cell. A page write will
only write data to the locations that were addressed and
will not rewrite the entire page.
Figure 5. Byte Write Cycle [
CE
CE
CE
CE
CE Controlled]
Figure 6. Page Mode Write Cycle
ADDRESS
CE
OE
WE
DATA OUT
tAS
DATA IN
DATA VALID
HIGH-Z
tAH
tWC
tOEH
tDH
tDS
tOES
tBLC
tCH
tCS
tCW
OE
CE
WE
ADDRESS
I/O
tWP
tBLC
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
BYTE n+2
LAST BYTE
tWC


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