MJE3439G datasheet(3/4 Pages) ONSEMI

номер детали	MJE3439G

подробное описание детали	NPN Silicon High?뭋oltage Power Transistor

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MJE3439

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Figure 1. Power−Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

12

14

8.0

10

4.0

6.0

2.0

20

60

100

140

1.0

Figure 2. Active−Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.5

0.3

0.2

0.05

0.001

5.0

10

0.02

0.03

2.0

20

50

1000

0.1

100 200

500

MJE3439

0.7

0.07

0.01

0.002

0.003

0.005

0.007

3.0

7.0

30

70

300

The Safe Operating Area Curves indicate IC − VCE limits below which the device will not enter secondary breakdown.

Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To

insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power

conditions.

Аналогичный номер детали - MJE3439G

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MJE3439G	82Kb / 4P	NPN Silicon High-Voltage Power Transistor December, 2013 ??Rev. 13

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Аналогичное описание - MJE3439G

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	2N5655	80Kb / 5P	Plastic NPN Silicon High?뭋oltage Power Transistor October, 2006 ??Rev. 9
ON Semiconductor	MJE4343	147Kb / 7P	High?뭋oltage High Power Transistors March, 2006 ??Rev. 4
STMicroelectronics	BUX98C	41Kb / 4P	HIGH POWER NPN SILICON TRANSISTOR
	2N3771	64Kb / 4P	HIGH POWER NPN SILICON TRANSISTOR June 1997
	BUT100	45Kb / 4P	HIGH POWER NPN SILICON TRANSISTOR
New Jersey Semi-Conduct...	2N1618	157Kb / 2P	HIGH POWER NPN SILICON TRANSISTOR
	BUX10	98Kb / 3P	HIGH POWER NPN SILICON TRANSISTOR
	2N3772	124Kb / 1P	HIGH POWER NPN SILICON TRANSISTOR
	MJE2801	84Kb / 1P	HIGH-POWER NPN SILICON TRANSISTOR
M/A-COM Technology Solu...	2N6676	482Kb / 4P	NPN High Power Silicon Transistor

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