MMSF7P03HDR2 datasheet(6/8 Pages) ONSEMI

номер детали	MMSF7P03HDR2

подробное описание детали	Power MOSFET 7 A, 30 V, P?묬hannel SO??

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SAFE OPERATING AREA

The Forward Biased Safe Operating Area curve (Figure

12) defines the maximum simultaneous drain−to−source

voltage and drain current that a transistor can handle safely

when it is forward biased. Curves are based upon maximum

peak junction temperature and a case temperature (TC) of

25

°C. Peak repetitive pulsed power limits are determined by

using the thermal response data in conjunction with the

procedures discussed in AN569, “Transient Thermal

Resistance − General Data and Its Use.”

Switching between the off−state and the on−state may

traverse any load line provided neither rated peak current

(IDM) nor rated voltage (VDSS) is exceeded, and that the

transition time (tr, tf) does not exceed 10

ms. In addition the

total power averaged over a complete switching cycle must

not exceed (TJ(MAX) − TC)/(RqJC).

A power MOSFET designated E−FET can be safely used

in switching circuits with unclamped inductive loads. For

reliable operation, the stored energy from circuit inductance

dissipated in the transistor while in avalanche must be less

than the rated limit and must be adjusted for operating

conditions differing from those specified. Although industry

practice is to rate in terms of energy, avalanche energy

capability is not a constant. The energy rating decreases

non−linearly with an increase of peak current in avalanche

and peak junction temperature.

Although many E−FETs can withstand the stress of

drain−to−source avalanche at currents up to rated pulsed

current (IDM), the energy rating is specified at rated

continuous current (ID), in accordance with industry

custom. The energy rating must be derated for temperature

as shown in the accompanying graph (Figure 13). Maximum

energy at currents below rated continuous ID can safely be

assumed to equal the values indicated.

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1.0

10

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 12 V

SINGLE PULSE

TA = 25°C

10

0.0

1

dc

10 ms

1.0

100

1 ms

TJ, STARTING JUNCTION TEMPERATURE (°C)

0

25

45

65

85

105

3000

145

2000

500

4000

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

5000

0.1

125

2500

1500

3500

4500

1000

ID = 7.0 A

Аналогичный номер детали - MMSF7P03HDR2

производитель	номер детали	датащи	подробное описание детали
VBsemi Electronics Co.,...	MMSF7P03HDR2G	957Kb / 8P	P-Channel 30-V (D-S) MOSFET

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Аналогичное описание - MMSF7P03HDR2

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	NTMS4802N	116Kb / 5P	Power MOSFET 30 V, 18 A, N?묬hannel, SO?? December, 2008 ??Rev. 0
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	NTMS4801N	140Kb / 5P	Power MOSFET 30 V, 12 A, N?묬hannel, SO?? April, 2009 ??Rev. 2
	NTMS4872N	118Kb / 5P	Power MOSFET 30 V, 10.2 A, N?묬hannel, SO?? January, 2009 ??Rev. 2
	NTMS4939N	141Kb / 5P	Power MOSFET 30 V, 12.5 A, N?묬hannel, SO?? September, 2009 ??Rev. 0
	NTMS4920N	137Kb / 5P	Power MOSFET 30 V, 17 A, N?묬hannel, SO?? September, 2009 ??Rev. 1
	NTMFS4823N	141Kb / 6P	Power MOSFET 30 V, 30 A, Single N?묬hannel, SO?? FL January, 2010 ??Rev. 2
	NTMS4107N	61Kb / 6P	Power MOSFET 30 V, 18 A, Single N?묬hannel, SO?? March, 2005 ??Rev. 1
	NTMD4N03R2G	126Kb / 8P	Power MOSFET 4 A, 30 V, N?묬hannel SO?? Dual August, 2013 ??Rev. 4

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Аналогичный номер детали - MMSF7P03HDR2

Аналогичное описание - MMSF7P03HDR2

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