1. ANODE

2. NC

3. CATHODE

3

2

-

T

O

S3

2

-

T

O

S

3

2

-

T

O

S

3

2

-

T

O

S3

2

-

T

O

S

(1)

(3)

(2)

(UNITS: mm)

RECTRON USA

1315 John Reed Court, Industry, CA 91745

Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com

SEMICONDUCTOR

TECHNICAL SPECIFICATION

BAS16

RECTRON

SURFACE MOUNT DIODE

Absolute Maximum Ratings (Ta=25

°C)

Items

Symbol

Ratings

Unit

Reverse VoltageVRRM

75

V

Reverse

Recovery Time

trr

4

ns

Forward Voltage

@ If = 50 mA

VF

1.0

V

Forward Current

IF

215

mA

Junction Temp.

Tj

-55 to 150

°C

Storage Temp.

Tstg

-55 to 150

°C

Mechanical Data

Items

Materials

Package

SOT-23

Lead Frame

42 Alloy

Lead Finish

Solder Plating

Bond Wire

Au

Mold Resin

Epoxy

Chip

Silicon

Electrical Characteristics (Ta=25

°C)

Ratings

Symbol

Ratings

Unit

Repetitive Peak Reverse Voltage

VRRM

85

V

Repetitive Peak Forward Current

IFRM

500

mA

Forward Voltage

IF= 1mA

IF= 10mA

IF= 50mA

IF= 100mA

VF

715

855

1000

1250

mV

Reverse Current

VR= 75V

VR= 25V (Tj= 150

°C)

VR= 75V (Tj= 150

°C)

IR

1.0

30

50

uA

Junction Capacitance VR = 0 V, f = 1MHz

Cj

2.0

pF

Reverse Recovery Time IF= IR= 10mA; RL= 100

Ω

trr

4

ns

Recoery Charge

IF= 10mA, VR= 5V, RL= 100

Ω

Qs

45

pC