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TLP2451 датащи(PDF) 3 Page - Toshiba Semiconductor |
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TLP2451 датащи(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TLP2451 2010-01-19 3 Electrical Characteristics (Ta = −40 to 125 °C, unless otherwise specified) Characteristics Symbol Test Circuit Test Condition Min Typ.* Max Unit Forward voltage VF ⎯ IF = 10 mA, Ta = 25 °C 1.40 1.57 1.80 V Temperature coefficient of forward voltage ∆VF/∆Ta ⎯ IF = 10 mA ⎯ −1.8 ⎯ mV/°C Input reverse current IR ⎯ VR = 5 V, Ta = 25 °C ⎯ ⎯ 10 μA Input capacitance CT ⎯ V =0 V, f = 1 MHz ⎯ 60 ⎯ pF IOPH1 V8-6 = 4 V ⎯ −0.4 −0.2 “H” Level IOPH2 1 VCC = 15 V IF = 5 mA V8-6 = 10 V ⎯ ⎯ −0.4 IOPL1 V6-5 = 2 V 0.2 0.5 ⎯ Output current (Note 6) “L” Level IOPL2 2 VCC = 15 V IF = 0 mA V6-5 = 10 V 0.4 ⎯ ⎯ A “H” Level VOH 3 IO = −100 mA, IF = 5 mA 6.0 8.5 ⎯ Output voltage “L” Level VOL 4 VCC = 10 V IO = 100 mA, VF = 0.8 V ⎯ 0.35 1.0 V “H” Level ICCH 5 IF = 10 mA ⎯ 1.1 2.0 Supply current “L” Level ICCL 6 VCC = 10 to 30 V VO=Open IF = 0 mA ⎯ 1.1 2.0 mA Threshold input current L → H IFLH ⎯ VCC = 15 V, VO > 1 V ⎯ 1.2 5 mA Threshold input voltage H → L VFHL ⎯ VCC = 15 V, VO < 1 V 0.8 ⎯ ⎯ V Supply voltage VCC ⎯ ⎯ 10 ⎯ 30 V *All typical values are at Ta=25°C, VCC=10 V unless otherwise specified Note 6: Duration of Io time ≤ 50 μs, 1 pulse Note 7: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low power consumption design. It is therefore all the more necessary to observe general precautions regarding ESD when handling this component. Isolation Characteristics (Ta = 25 °C) Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance input to output CS VS = 0 V , f = 1MHz (Note 3) ⎯ 0.8 ⎯ pF Isolation resistance RS R.H. ≤ 60 %, VS = 500 V (Note 3) 1×10 12 10 14 ⎯ Ω AC, 1 minute 3750 ⎯ ⎯ AC, 1 second, in oil ⎯ 10000 ⎯ V rms Isolation voltage BVS DC, 1 minute, in oil ⎯ 10000 ⎯ Vdc |
Аналогичный номер детали - TLP2451 |
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Аналогичное описание - TLP2451 |
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