поискавой системы для электроныых деталей |
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TPD2EUSB30 датащи(PDF) 3 Page - Texas Instruments |
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TPD2EUSB30 датащи(HTML) 3 Page - Texas Instruments |
3 / 15 page TPD2EUSB30, TPD4EUSB30 www.ti.com SLVSAC2 – AUGUST 2010 ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT IO voltage tolerance D+, D– pins 0 6 TA Operating free-air temperature range –40 85 °C Tstg Storage temperature range –65 125 °C IEC 61000-4-2 Contact Discharge D+, D– pins ±8 kV IEC 61000-4-2 Air-Gap Discharge D+, D– pins ±8 kV ESD protection (TPD2EUSB30) IEC 61000-4-2 Air-Gap Discharge D+, D– pins ±9 kV (TPD4EUSB30) Peak pulse current (tp = 8/20 ms) D+, D– pins 5 A Peak pulse power (tp = 8/20 ms) D+, D– pins 45 W (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VRWM Reverse stand-off voltage D+,D– pins to ground 5.5 V Vclamp Clamp voltage D+,D– pins to ground, IIO = 1 A 8 V IIO Current from IO port to supply pins VIO = 2.5 V, ID = 8 mA 0.01 0.1 mA D+,D– pins, VIO = 2.5 V, VD Diode forward voltage 0.6 0.8 0.95 V lower clamp diode, ID = 8 mA Rdyn Dynamic resistance D+,D– pins I = 1 A 1 Ω CIO-IO Capacitance IO to IO D+,D– pins VIO = 2.5 V 0.05 pF D+,D– pins (DRT) 0.7 CIO-GND Capacitance IO to GND VIO = 2.5 V pF D1+, D1-, 0.8 D2+, D2- (DQA ) VBR Break-down voltage IIO = 1 mA 7 V Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPD2EUSB30, TPD4EUSB30 |
Аналогичный номер детали - TPD2EUSB30 |
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Аналогичное описание - TPD2EUSB30 |
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