KM416V254D datasheet(8/36 Pages) SAMSUNG

номер детали	KM416V254D

подробное описание детали	256K x 16Bit CMOS Dynamic RAM with Extended Data Out

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производитель	SAMSUNG [Samsung semiconductor]

домашняя страница	http://www.samsung.com/Products/Semiconductor

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KM416C254D, KM416V254D

CMOS DRAM

tASC, tCAH are referenced to the earlier CAS rising edge.

tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.

tCWD is referenced to the later CAS falling edge at word red-modify-write cycle.

tCWL is specified from W falling edge to the earlier CAS rising edge.

tCSR is referenced to earlier CAS falling low before RAS transition low.

tCHR is referenced to the later CAS rising high after RAS transition low.

tCSR

tCHR

RAS

LCAS

UCAS

tDS

tDH

LCAS

DQ0 ~ DQ15

Din

20.

18.

17.

16.

13.

15.

14.

19.

UCAS

W

tDS, tDH are specified for the earlier CAS falling low.

f

tRASS

≥100us, then RAS precharge time must use tRPS instead of tRP.

For RAS-only refresh and burst CAS-before-RAS refresh mode, 512(512K) cycle of burst refresh must be executed within 8ms

before and after self refresh, in order to meet refresh specification.

For distributed CAS-before-RAS with 15.6us interval, CAS-before-RAS refresh should be executed with in 15.6us immediately

before and after self refresh in order to meet refresh specification.

21.

22.

Аналогичный номер детали - KM416V254D

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KM416V256D	83Kb / 8P	256K x 16Bit CMOS Dynamic RAM with Fast Page Mode

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Аналогичное описание - KM416V254D

производитель	номер детали	датащи	подробное описание детали
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List of Unclassifed Man...	GLT440L16	404Kb / 17P	256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

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