KM416S8030B

Rev. 0.1 Jun. 1999

CMOS SDRAM

DQ BUFFER OUTPUT DRIVE CHARACTERISTICS

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Notes

Output rise time

trh

Measure in linear

region : 1.2V ~ 1.8V

1.37

4.37

Volts/ns

3

Output fall time

tfh

Measure in linear

region : 1.2V ~ 1.8V

1.30

3.8

Volts/ns

3

Output rise time

trh

Measure in linear

region : 1.2V ~ 1.8V

2.8

3.9

5.6

Volts/ns

1,2

Output fall time

tfh

Measure in linear

region : 1.2V ~ 1.8V

2.0

2.9

5.0

Volts/ns

1,2

1. Rise time specification based on 0pF + 50

2. Fall time specification based on 0pF + 50

3. Measured into 50pF only, use these values to characterize to.

Notes :

1. Parameters depend on programmed CAS latency.

2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.

3. Assumed input rise and fall time (tr & tf) = 1ns.

If tr & tf is longer than 1ns, transient time compensation should be considered,

i.e., [(tr + tf)/2-1]ns should be added to the parameter.

Notes :

Parameter

Symbol

- A

- 8

- H

- L

- 10

Unit

Note

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

CLK cycle time

CAS latency=3

7.5

1000

8

1000

10

1000

10

1000

10

1000

ns

1

CAS latency=2

-

-

10

12

13

CLK to valid

output delay

CAS latency=3

5.4

6

6

6

7

ns

1,2

CAS latency=2

-

-

6

7

7

Output data

hold time

CAS latency=3

2.7

3

3

3

3

ns

2

CAS latency=2

-

-

3

3

3

CLK high pulse width

2.5

3

3

3

3.5

ns

3

CLK low pulse width

2.5

3

3

3

3.5

ns

3

Input setup time

1.5

2

2

2

2.5

ns

3

Input hold time

0.8

1

1

1

1.5

ns

3

CLK to output in Low-Z

1

1

1

1

1

ns

2

CLK to output

in Hi-Z

CAS latency=3

5.4

6

6

6

7

ns

CAS latency=2

-

-

6

7

7