поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

KM44V4100C датащи(PDF) 8 Page - Samsung semiconductor

номер детали KM44V4100C
подробное описание детали  4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Download  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  SAMSUNG [Samsung semiconductor]
домашняя страница  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM44V4100C датащи(HTML) 8 Page - Samsung semiconductor

Back Button KM44V4100C Datasheet HTML 4Page - Samsung semiconductor KM44V4100C Datasheet HTML 5Page - Samsung semiconductor KM44V4100C Datasheet HTML 6Page - Samsung semiconductor KM44V4100C Datasheet HTML 7Page - Samsung semiconductor KM44V4100C Datasheet HTML 8Page - Samsung semiconductor KM44V4100C Datasheet HTML 9Page - Samsung semiconductor KM44V4100C Datasheet HTML 10Page - Samsung semiconductor KM44V4100C Datasheet HTML 11Page - Samsung semiconductor KM44V4100C Datasheet HTML 12Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 8 / 20 page
background image
KM44C4000C, KM44C4100C
CMOS DRAM
KM44V4000C, KM44V4100C
NOTES
An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles
before proper device operation is achieved.
VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.
Measured with a load equivalent to 2 TTL(5V)/1 TTL(3.3V) loads and 100pF.
Operation within the
tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only.
If
tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
Assumes that
tRCD
tRCD(max).
tOFF(min)and tOEZ(max) define the time at which the output achieves the open circuit condition and are not referenced Voh
or Vol.
tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electrical char-
acteristics only. If
tWCS
tWCS(min), the cycle is an early write cycle and the data output will remain high impedance for the
duration of the cycle. If
tCWD
tCWD(min), tRWDtRWD(min) and tAWDtAWD(min), then the cycle is a read-modify-write cycle
and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the
condition of the data out is indeterminate.
Either
tRCH or tRRH must be satisfied for a read cycle.
These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in read-modify-write cycles.
Operation within the
tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only.
If
tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA.
These specifications are applied in the test mode.
In test mode read cycle, the value of
tRAC, tAA, tCAC is delayed by 2ns to 5ns for the specified values. These parameters
should be specified in test mode cycles by adding the above value to the specified value in this data sheet.
If
tRASS
≥100us, then RAS precharge time must use tRPS instead of tRP.
For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K)/2048(2K) cycles of burst refresh must be exe-
cuted within 64ms/32ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immedi-
ately before and after self refresh in order to meet refresh specification.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
1.
2.
3.
4.
15.


Аналогичный номер детали - KM44V4100C

производительномер деталидатащиподробное описание детали
logo
Samsung semiconductor
KM44V1000D SAMSUNG-KM44V1000D Datasheet
372Kb / 21P
   1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
More results

Аналогичное описание - KM44V4100C

производительномер деталидатащиподробное описание детали
logo
Samsung semiconductor
K4F170411D SAMSUNG-K4F170411D Datasheet
225Kb / 20P
   4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
K4F170411C SAMSUNG-K4F170411C Datasheet
225Kb / 20P
   4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
K4F660412D SAMSUNG-K4F660412D Datasheet
367Kb / 20P
   16M x 4bit CMOS Dynamic RAM with Fast Page Mode
KM44C1000D SAMSUNG-KM44C1000D Datasheet
372Kb / 21P
   1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
KM44C16000B SAMSUNG-KM44C16000B Datasheet
341Kb / 20P
   16M x 4bit CMOS Dynamic RAM with Fast Page Mode
KM416V4000B SAMSUNG-KM416V4000B Datasheet
767Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM41C4000D SAMSUNG-KM41C4000D Datasheet
340Kb / 20P
   4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
KM416V4000C SAMSUNG-KM416V4000C Datasheet
88Kb / 9P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612D SAMSUNG-K4F661612D Datasheet
390Kb / 35P
   4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
K4F661612E SAMSUNG-K4F661612E Datasheet
386Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com