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IRF7704GPBF датащи(PDF) 1 Page - International Rectifier

номер детали IRF7704GPBF
подробное описание детали  HEXFETPower MOSFET Ultra Low On-Resistance
Download  9 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7704GPBF датащи(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-40
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-4.6
ID @ TA= 70°C
Continuous Drain Current, VGS @ -10V
-3.7
A
IDM
Pulsed Drain Current

-19
PD @TA = 25°C
Power Dissipation
ƒ
1.5
PD @TA = 70°C
Power Dissipation
ƒ
1.0
Linear Derating Factor
12
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
04/23/08
www.irf.com
1
IRF7704GPbF
HEXFET® Power MOSFET
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
83
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
VDSS
RDS(on) max (mW)
ID
-40V
46@VGS = -10V
-4.6A
74@VGS = -4.5V
-3.7A
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
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Аналогичный номер детали - IRF7704GPBF

производительномер деталидатащиподробное описание детали
logo
International Rectifier
IRF7704 IRF-IRF7704 Datasheet
193Kb / 8P
   Power MOSFET(Vdss=-40V)
IRF7704PBF IRF-IRF7704PBF Datasheet
198Kb / 9P
   HEXFET Power MOSFET
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