поискавой системы для электроныых деталей |
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ISL12020MIRZ-T датащи(PDF) 5 Page - Intersil Corporation |
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ISL12020MIRZ-T датащи(HTML) 5 Page - Intersil Corporation |
5 / 32 page 5 FN6667.4 February 11, 2010 Absolute Maximum Ratings Thermal Information Voltage on VDD, VBAT and IRQ/FOUT pins (Respect to Ground) . . . . . . . . . . . . . . . . -0.3V to 6.0V Voltage on SCL and SDA pins (Respect to Ground) . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on X1 and X2 pins (respect to ground, Note 6) . . . . . . . . . . . -0.3V to 2.5V ESD Rating Human Body Model (Per MIL-STD-883 Method 3014) . . . . . . . . . . . >3kV Machine Model . . . . . . . . . . . . . . . . . . . . . . . . .>300V Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) 20 Lead DFN (Notes 4, 5) . . . . . 40 3.5 Storage Temperature . . . . . . . . . . . . . . . -40°C to +85°C Pb-Free Reflow Profile (Note 7) . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 4. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech Brief TB379. 5. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside. 6. The X1 and X2 pins are connected internally to a crystal and should be a floating electrical connection. 7. The ISL12020M Oscillator Initial Accuracy can change after solder reflow attachment. The amount of change will depend on the reflow temperature and length of exposure. A general rule is to use only one reflow cycle and keep the temperature and time as short as possible. Changes on the order of ±1ppm to ±3ppm can be expected with typical reflow profiles. DC Operating Characteristics - RTC Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise stated. Boldface limits apply over the operating temperature range, -40°C to +85°C. SYMBOL PARAMETER CONDITIONS MIN (Note 8) TYP (Note 9) MAX (Note 8) UNITS NOTES VDD Main Power Supply (Note 10) 2.7 5.5 V VBAT Battery Supply Voltage (Note 10) 1.8 5.5 V11 IDD1 Supply Current. (I2Cnot active, temperature conversion not active, FOUT not active) VDD = 5V 4.1 7 µA 12, 13 VDD = 3V 3.5 6 µA 12, 13 IDD2 Supply Current. (I2C active, temperature conversion not active, FOUT not active) VDD = 5V 200 500 µA 12, 13 IDD3 Supply Current. (I2Cnot active, temperature conversion active, FOUT not active) VDD = 5V 120 400 µA 12, 13 IBAT Battery Supply Current VDD = 0V, VBAT = 3V, TA =+25°C 1.0 1.6 µA 12 VDD = 0V, VBAT = 3V 1.0 5.0 µA 12 IBATLKG Battery Input Leakage VDD = 5.5V, VBAT = 1.8V 100 nA ILI Input Leakage Current on SCL VIL = 0V, VIH = VDD -1.0 ±0.1 1.0 µA ILO I/O Leakage Current on SDA VIL = 0V, VIH = VDD -1.0 ±0.1 1.0 µA VBATM Battery Level Monitor Threshold -100 +100 mV VPBM Brownout Level Monitor Threshold -100 +100 mV VTRIP VBAT Mode Threshold (Note 10) 2.0 2.2 2.4 V VTRIPHYS VTRIP Hysteresis 30 mV 15 VBATHYS VBAT Hysteresis 50 mV 15 Fout25°C Oscillator Initial Accuracy VDD = 3.3V, TA = +25°C ±2 ppm 7, 15 ΔFoutT Oscillator Stability vs Temperature VDD = 3.3V -5 +5 ppm 7, 15 ΔFoutV Oscillator Stability vs Voltage 2.7V ≤ VDD ≤ 5.5V -3 +3 ppm 15 Temperature Sensor Accuracy VDD = VBAT = 3.3V ±2 °C 15 ISL12020M |
Аналогичный номер детали - ISL12020MIRZ-T |
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Аналогичное описание - ISL12020MIRZ-T |
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