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BAT54CV датащи(PDF) 2 Page - NXP Semiconductors |
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BAT54CV датащи(HTML) 2 Page - NXP Semiconductors |
2 / 9 page BAT54CV_2 © NXP B.V. 2010. All rights reserved. Objective data sheet Rev. 02 — 15 January 2010 2 of 9 NXP Semiconductors BAT54CV Two Schottky barrier double diodes in ultra small SOT666 package 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values Table 2. Pinning Pin Description Simplified outline Symbol 1 anode (diode 1) 2 anode (diode 2) 3 common cathode (diode 3, 4) 4 anode (diode 3) 5 anode (diode 4) 6 common cathode (diode 1, 2) 12 3 4 5 6 1 5 6 23 4 sym057 Table 3. Ordering information Type number Package Name Description Version BAT54CV - plastic surface mounted package; 6 leads SOT666 Table 4. Marking codes Type number Marking code BAT54CV C5 Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VR continuous reverse voltage - 30 V IF continuous forward current - 200 mA IFRM repetitive peak forward current tp ≤ 10 ms; δ≤ 0.5 -0.85 A IFSM non-repetitive peak forward current tp = 8.3 ms - 2 A Tj junction temperature - 125 °C Tamb ambient temperature −65 +125 °C Tstg storage temperature −65 +150 °C |
Аналогичный номер детали - BAT54CV |
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Аналогичное описание - BAT54CV |
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