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BTA204S-800B датащи(PDF) 2 Page - NXP Semiconductors

номер детали BTA204S-800B
подробное описание детали  Three-quadrant triacs high commutation
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 May 2005
2 of 13
Philips Semiconductors
BTA204S series B and C
Three-quadrant triacs high communication
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 6 A/
µs.
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BTA204S-600B
DPAK
plastic single-ended surface mounted package; 3 leads (one lead cropped)
SOT428
BTA204S-600C
BTA204S-800B
BTA204S-800C
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BTA204S-600B; BTA204S-600C
[1] -
600
V
BTA204S-800B; BTA204S-800C
-
800
V
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 107 °C;
see Figure 4 and 5
-4
A
ITSM
non-repetitive peak on-state current
full sine wave; Tj =25 °C prior to surge;
see Figure 2 and 3
t=20ms
-
25
A
t = 16.7 ms
-
27
A
I2tI2t for fusing
t = 10 ms
-
3.1
A2s
dIT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
-
100
A/
µs
IGM
peak gate current
-
2
A
VGM
peak gate voltage
-
5
V
PGM
peak gate power
-
5
W
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
125
°C


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