поискавой системы для электроныых деталей |
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SN1N датащи(PDF) 1 Page - EIC discrete Semiconductors |
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SN1N датащи(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page SN1N - SN1R SURFACE MOUNT HIGH VOLTAGE RECTIFIERS PRV : 1200 - 2000 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.067 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL SN1N SN1O SN1P SN1Q SN1R UNIT Maximum Repetitive Peak Reverse Voltage VRRM 1200 1400 1600 1800 2000 V Maximum RMS Voltage VRMS 840 980 1120 1260 1400 V Maximum DC Blocking Voltage VDC 1200 1400 1600 1800 2000 V Maximum Average Forward Current Ta = 75 °C IF(AV) 1.0 A Maximum Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A VF 2.2 V Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 100 µA Typical Junction Capacitance (Note 1) Cj 36 pF Junction Temperature Range TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC Page 1 of 2 Rev. 02 : March 24, 2005 RATING IFSM 30 A 2.0 ± 0.2 2.1 ± 0.2 SMA (DO-214AC) 1.2 ± 0.2 2.6 ± 0.15 Dimensions in millimeter 1.1 ± 0.3 0.2 ± 0.07 |
Аналогичный номер детали - SN1N_05 |
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Аналогичное описание - SN1N_05 |
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