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STFW3N150 датащи(PDF) 4 Page - STMicroelectronics

номер детали STFW3N150
подробное описание детали  N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STFW3N150 датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STFW3N150, STP3N150, STW3N150
4/15
Doc ID 13102 Rev 9
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
1500
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
10
500
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 30 V
± 100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 1.3 A
6
9
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward
transconductance
VDS = 30 V, ID = 1.3 A
-
2.6
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
-
939
102
13.2
-
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VDS=0 to 1200 V, VGS = 0
-
100
-
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-4
-
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 1200 V, ID = 2.5 A,
VGS = 10 V
(see Figure 19)
-
29.3
4.6
17
-
nC
nC
nC


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