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STFW3N150 датащи(PDF) 4 Page - STMicroelectronics |
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STFW3N150 датащи(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STFW3N150, STP3N150, STW3N150 4/15 Doc ID 13102 Rev 9 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 1500 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C 10 500 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 30 V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on Static drain-source on resistance VGS = 10 V, ID = 1.3 A 6 9 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS = 30 V, ID = 1.3 A - 2.6 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 939 102 13.2 - pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VDS=0 to 1200 V, VGS = 0 - 100 - pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain -4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 1200 V, ID = 2.5 A, VGS = 10 V (see Figure 19) - 29.3 4.6 17 - nC nC nC |
Аналогичный номер детали - STFW3N150_10 |
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Аналогичное описание - STFW3N150_10 |
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