STD3NK100Z datasheet(3/16 Pages) STMICROELECTRONICS

номер детали	STD3NK100Z

подробное описание детали	N-channel 1000V - 5.4廓 - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH??Power MOSFET

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STF3NK100Z - STP3NK100Z - STD3NK100Z

Electrical ratings

3/16

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/DPAK TO-220FP

VDS

Drain-source voltage (VGS = 0)

1000

V

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25°C

2.5

2.5 (1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC = 100°C

1.57

1.57(2)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

10

10 (2)

A

PTOT

Total dissipation at TC = 25°C

90

25

W

Derating factor

0.72

0.2

W/°C

VESD(G-S)

Gate source ESD (HBM-C=100pF, R=1.5K

Ω)

3000

V

dv/dt (3)

3.

ISD ≤ 2.5A, di/dt ≤ 200A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1s;TC=25°C)

--

2500

V

Tj

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220/DPAK TO-220FP

Rthj-case

Thermal resistance junction-case max

1.39

5

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

TL

Maximum lead temperature for soldering purpose

300

Table 4.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

(1)

1.

Pulse width limited by Tjmax

Avalanche current, repetitive or not-repetitive

2.5

A

EAS

(2)

2.

Starting Tj = 25°C, ID = IAR, VDD = 50V

Single pulse avalanche energy

110

mJ

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STD3NK100Z датащи(PDF) 3 Page - STMicroelectronics

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