поискавой системы для электроныых деталей |
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STD60N3LH5 датащи(PDF) 1 Page - STMicroelectronics |
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STD60N3LH5 датащи(HTML) 1 Page - STMicroelectronics |
1 / 16 page April 2009 Doc ID 14079 Rev 3 1/16 16 STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STD60N3LH5 30 V 0.008 Ω 48 A STP60N3LH5 30 V 0.0084 Ω 48 A STU60N3LH5 30 V 0.0084 Ω 48 A DPAK 1 3 3 2 1 IPAK 1 2 3 TO-220 Table 1. Device summary Order codes Marking Package Packaging STD60N3LH5 60N3LH5 DPAK Tape and reel STP60N3LH5 60N3LH5 TO-220 Tube STU60N3LH5 60N3LH5 IPAK Tube www.st.com |
Аналогичный номер детали - STD60N3LH5_09 |
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Аналогичное описание - STD60N3LH5_09 |
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