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BTB12-600CW3 датащи(PDF) 2 Page - ON Semiconductor |
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BTB12-600CW3 датащи(HTML) 2 Page - ON Semiconductor |
2 / 6 page BTB12-600CW3G, BTB12-800CW3G http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Case Junction-to-Ambient RqJC RqJA 2.3 60 °C/W Maximum Lead Temperature for Soldering Purposes 1/8 ″ from Case for 10 seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C IDRM/ IRRM - - - - 0.005 1.0 mA ON CHARACTERISTICS Peak On‐State Voltage (Note 2) (ITM = ±17 A Peak) VTM - - 1.55 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IGT 2.0 2.0 2.0 - - - 35 35 35 mA Holding Current (VD = 12 V, Gate Open, Initiating Current = ±100 mA) IH - - 45 mA Latching Current (VD = 12 V, IG = 42 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IL - - - - - - 50 80 50 mA Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGT 0.5 0.5 0.5 - - - 1.7 1.1 1.1 V Gate Non-Trigger Voltage (TJ = 125°C) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGD 0.2 0.2 0.2 - - - - - - V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber) (dI/dt)c 3.0 - - A/ms Critical Rate of Rise of On-State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt - - 50 A/ ms Critical Rate of Rise of Off‐State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 1500 - - V/ ms 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. |
Аналогичный номер детали - BTB12-600CW3 |
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Аналогичное описание - BTB12-600CW3 |
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