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SPI08N50C3 датащи(PDF) 2 Page - Infineon Technologies AG

номер детали SPI08N50C3
подробное описание детали  New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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200
9-11-27
Rev. 2.
91
Page 2
SPP08N50C3, SPI08N50C3
SPA08N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
VDS = 400 V, ID = 7.6 A, Tj = 125 °C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1.5
K/W
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.9
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA FP
-
-
80
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 3)
Tsold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
500
-
-
V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=7.6A
-
600
-
Gate threshold voltage
VGS(th)
ID=350µA, VGS=VDS 2.1
3
3.9
Zero gate voltage drain current
IDSS
VDS=500V, VGS=0V,
Tj=25°C
Tj=150°C
-
-
0.5
-
1
100
µA
Gate-source leakage current
IGSS
VGS=20V, VDS=0V
-
-
100
nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A
Tj=25°C
Tj=150°C
-
-
0.5
1.5
0.6
-
Gate input resistance
RG
f=1MHz, open drain
-
1.2
-


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