поискавой системы для электроныых деталей
  Russian  ▼

Delete All
ON OFF
ALLDATASHEETRU.COM

X  

Preview PDF Download HTML

SPP07N60C3 датащи(PDF) 1 Page - Infineon Technologies AG

номер детали SPP07N60C3
подробное описание детали  New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Download  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPP07N60C3 датащи(HTML) 1 Page - Infineon Technologies AG

  SPP07N60C3_09 Datasheet HTML 1Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 2Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 3Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 4Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 5Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 6Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 7Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 8Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 15 page
background image
200
9-11-27
Rev.
3.
2
Page 1
SPP07N60C3
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
VDS @ Tjmax
650
V
RDS(on)
0.6
ID
7.3
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P
G-TO220
P
G-TO220FP PG-TO262
2
P-TO220-3-1
2 3
1
P-TO220-3-31
1
2
3
Marking
07N60C3
07N60C3
07N60C3
Type
Package
Ordering Code
SPP07N60C3
P
G-TO220-3
Q67040-S4400
SPI07N60C3
P
G-TO262
Q67040-S4424
SPA07N60C3
P
G-TO220FP
SP000216303
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_I
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
7.3
4.6
7.31)
4.61)
A
Pulsed drain current, tp limited by Tjmax
ID puls
21.9
21.9
A
Avalanche energy, single pulse
ID=5.5A, VDD=50V
EAS
230
230
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V
EAR
0.5
0.5
Avalanche current, repetitive tAR limited by Tjmax
IAR
7.3
7.3
A
Gate source voltage static
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
83
32
W
Operating and storage temperature
Tj , Tstg
-55...+150
°C
Reverse diode dv/dt
dv/dt
15
V/ns
6)


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15 


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn