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SPP07N60C3 датащи(PDF) 2 Page - Infineon Technologies AG

номер детали SPP07N60C3
подробное описание детали  New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Download  15 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPP07N60C3 датащи(HTML) 2 Page - Infineon Technologies AG

  SPP07N60C3_09 Datasheet HTML 1Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 2Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 3Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 4Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 5Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 6Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 7Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 8Page - Infineon Technologies AG SPP07N60C3_09 Datasheet HTML 9Page - Infineon Technologies AG Next Button
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200
9-11-27
Rev.
3.
2
Page 2
SPP07N60C3
SPI07N60C3, SPA07N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1.5
K/W
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.9
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
35
62
-
Soldering temperature,
wavesoldering
1.6 mm (0.063 in.) from case for 10s
Tsold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=7.3A
-
700
-
Gate threshold voltage
VGS(th)
ID=350µA, VGS=VDS 2.1
3
3.9
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
-
-
0.5
-
1
100
µA
Gate-source leakage current
IGSS
VGS=30V, VDS=0V
-
-
100
nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A
Tj=25°C
Tj=150°C
-
-
0.54
1.46
0.6
-
Gate input resistance
RG
f=1MHz, open drain
-
0.8
-


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