поискавой системы для электроныых деталей |
|
SPI07N60S5 датащи(PDF) 1 Page - Infineon Technologies AG |
|
SPI07N60S5 датащи(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page 200 9-11-27 Rev. 2. 7 Page 1 SPP07N60S5 SPI07N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P G-TO262 PG-TO220 2 P-TO220-3-1 2 3 1 Type Package Ordering Code SPP07N60S5 P G-TO220 Q67040-S4172 SPI07N60S5 P G-TO262 Q67040-S4328 Marking 07N60S5 07N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 7.3 4.6 A Pulsed drain current, t p limited by Tjmax ID puls 14.6 Avalanche energy, single pulse ID = - A, VDD = 50 V EAS 230 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 7.3 A, VDD = 50 V EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 83 W Operating and storage temperature Tj , Tstg -55... +150 °C |
Аналогичный номер детали - SPI07N60S5 |
|
Аналогичное описание - SPI07N60S5 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |