Characteristic

Test Conditions

Min.

Typ.

Max. Unit

Prelim. 1/94

1

3

4

2

R

38.0 (1 .496)

38.2 (1 .504)

30.1 (1 .1 8 5 )

3 0 .3 (1 .193 )

14.9 (0 .5 87)

15.1 (0 .5 94)

3 .3 (0 .129 )

3 .6 (0 .1 43)

7.8 (0 .3 0 7 )

8.2 (0 .3 2 2 )

3 1 .5 (1 .240 )

3 1 .7 (1 .248 )

4.0 (0 .1 5 7 )

(2 P la c e s)

R =

4.0 (0 .1 57 )

4.2 (0 .1 65 )

)

)

4.1 (0 .1 61

4.3 (0 .1 69

4.8 (0 .1 87 )

4.9 (0 .1 93 )

(4 places)

W =

H =

8.9 (0 .3 50)

9.6 (0 .3 78)

11 .8 (0 .463)

12 .2 (0 .480)

Hex Nut M 4

(4 places)

0.75 (0 .0 30 )

0.85 (0 .0 33 )

5.1 (0 .2 01 )

5.9 (0 .2 32 )

1.95 (0 .0 77)

2.1 4 (0 .0 84 )

SOT–227 Package Outline.

Dimensions in mm (inches)

Drain – Source Voltage

Continuous Drain Current

Gate – Source Voltage

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

ISOLATED

POWER MOSFETS

400

56

224

±30

520

4.16

–55 to 150

300

V

A

A

V

W

W / °C

°C

Drain – Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate – Source Leakage Current

Gate Threshold Voltage

400

56

0.075

250

1000

±100

24

V

A

Ω

µA

nA

V

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width < 380

µS , Duty Cycle < 2%

BFC14

LAB

SEME

400V

56A

Ω

* Source 2 may be omitted,

shorted to Source 1 or used for

Gate drive circuit.

4TH GENERATION MOSFET

Terminal 1

Source 2*

Terminal 2

Drain

Terminal 3

Gate

Terminal 4

Source 1