N-CHANNEL

POWER MOSFET

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Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

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Document Number 9142

Issue 1

Page 1 of 3

IRF330 / 2N6760

In A Hermetic Metal TO-3 Package

Motor Control and Amplifier Applications

C = 25°C unless otherwise stated)

VDS

Drain – Source Voltage

400V

VGS

Gate – Source Voltage

±20V

ID

Continuous Drain Current

Tc = 25°C

5.5A

ID

Continuous Drain Current

Tc = 100°C

3.5A

IDM

Pulsed Drain Current

(1)

22A

PD

Total Power Dissipation at

Tc = 25°C

75W

Derate Above 25°C

0.6W/°C

EAS

Single Pulse Avalanche Energy

(2)

1.7mJ

IAR

Avalanche Current

(1)

5.5A

dv/dt

Peak Diode Recovery

(3)

4V/ns

TJ

Junction Temperature Range

-55 to +150°C

Tstg

Storage Temperature Range

-55 to +150°C

TL

300°C

THERMAL PROPERTIES

Symbols

Parameters

Max.

Units

RθJC

Thermal Resistance, Junction To Case

1.67

°C/W

INTERNAL PACKAGE INDUCTANCE

Symbols

Parameters

Typ.

Units

LS + LD

Total Inductance

6.1

nH

No

No

No

Notes

tes

tes

tes

(1)

Repetitive Rating: Pulse width limited by maximum junction temperature

(2)

@VDD = 50V, Peak IL = 5.5A, Starting TJ = 25°C

(3)

@ ISD ≤ 5.5A, di/dt ≤ 90A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 7.5Ω

(4)

Pulse Width ≤ 300us, δ ≤ 2%